complementary silicon plastic power transistors . . . designed for use as highfrequency drivers in audio amplifiers. ? dc current gain specified to 4.0 amperes h fe = 40 (min) @ i c = 3.0 adc = 20 (min) @ i c = 4.0 adc ? collectoremitter sustaining voltage e v ceo(sus) = 120 vdc (min) e mje15028, mje15029 = 150 vdc (min) e mje15030, mje15031 ? high current gain e bandwidth product f t = 30 mhz (min) @ i c = 500 madc ? to220ab compact package ??????????????????????? ??????????????????????? maximum ratings ???????????? ? ?????????? ? ???????????? rating ???? ? ?? ? ???? symbol ???? ? ?? ? ???? mje15028 mje15029 ???? ? ?? ? ???? mje15030 mje15031 ??? ? ? ? ??? unit ???????????? ???????????? collectoremitter voltage ???? ???? v ceo ???? ???? 120 ???? ???? 150 ??? ??? vdc ???????????? ???????????? collectorbase voltage ???? ???? v cb ???? ???? 120 ???? ???? 150 ??? ??? vdc ???????????? emitterbase voltage ???? v eb ??????? 5.0 ??? vdc ???????????? ? ?????????? ? ???????????? collector current e continuous e peak ???? ? ?? ? ???? i c ??????? ? ????? ? ??????? 8.0 16 ??? ? ? ? ??? adc ???????????? ???????????? base current ???? ???? i b ??????? ??????? 2.0 ??? ??? adc ???????????? ???????????? total power dissipation @ t c = 25 c derate above 25 c ???? ???? p d ??????? ??????? 50 0.40 ??? ??? watts w/ c ???????????? ? ?????????? ? ???????????? total power dissipation @ t a = 25 c derate above 25 c ???? ? ?? ? ???? p d ??????? ? ????? ? ??????? 2.0 0.016 ??? ? ? ? ??? watts w/ c ???????????? ? ?????????? ? ???????????? operating and storage junction temperature range ???? ? ?? ? ???? t j , t stg ??????? ? ????? ? ??????? 65 to +150 ??? ? ? ? ??? c ??????????????????????? ??????????????????????? thermal characteristics ???????????? characteristic ???? symbol ??????? max ??? unit ???????????? ???????????? thermal resistance, junction to case ???? ???? r q jc ??????? ??????? 2.5 ??? ??? c/w ???????????? ???????????? thermal resistance, junction to ambient ???? ???? r q ja ??????? ??????? 62.5 ??? ??? c/w 0 figure 1. power derating t, temperature ( c) 0 40 60 100 120 160 40 t c 20 60 p d , power dissipation (watts) 0 2.0 t a 1.0 3.0 80 140 t c t a 20 preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2002 april, 2002 rev. 3 1 publication order number: mje15028/d mje15028 mje15030 mje15029 mje15031 *on semiconductor preferred device 8 ampere power transistors complementary silicon 120150 volts 50 watts * npn pnp * * * case 221a09 to220ab style 1: pin 1. base 2. collector 3. emitter 4. collector 1 2 3 4
mje15028 mje15030 mje15029 mje15031 http://onsemi.com 2 ????????????????????????????????? ????????????????????????????????? electrical characteristics (t c = 25 c unless otherwise noted) ?????????????????????? ?????????????????????? characteristic ????? ????? symbol ??? ??? min ???? ???? max ??? ??? unit ????????????????????????????????? ????????????????????????????????? off characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter sustaining voltage (1) (i c = 10 madc, i b = 0) mje15028, mje15029 mje15030, mje15031 ????? ? ??? ? ????? v ceo(sus) ??? ? ? ? ??? 120 150 ???? ? ?? ? ???? e e ??? ? ? ? ??? vdc ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? collector cutoff current (v ce = 120 vdc, i b = 0) mje15028, mje15029 (v ce = 150 vdc, i b = 0) mje15030, mje15031 ????? ? ??? ? ? ??? ? ????? i ceo ??? ? ? ? ? ? ? ??? e e ???? ? ?? ? ? ?? ? ???? 0.1 0.1 ??? ? ? ? ? ? ? ??? madc ?????????????????????? ? ???????????????????? ? ?????????????????????? collector cutoff current (v cb = 120 vdc, i e = 0) mje15028, mje15029 (v cb = 150 vdc, i e = 0) mje15030, mje15031 ????? ? ??? ? ????? i cbo ??? ? ? ? ??? e e ???? ? ?? ? ???? 10 10 ??? ? ? ? ??? m adc ?????????????????????? ? ???????????????????? ? ?????????????????????? emitter cutoff current (v be = 5.0 vdc, i c = 0) ????? ? ??? ? ????? i ebo ??? ? ? ? ??? e ???? ? ?? ? ???? 10 ??? ? ? ? ??? m adc ????????????????????????????????? ????????????????????????????????? on characteristics (1) ?????????????????????? ? ???????????????????? ? ? ???????????????????? ? ? ???????????????????? ? ?????????????????????? dc current gain (i c = 0.1 adc, v ce = 2.0 vdc) (i c = 2.0 adc, v ce = 2.0 vdc) (i c = 3.0 adc, v ce = 2.0 vdc) (i c = 4.0 adc, v ce = 2.0 vdc) ????? ? ??? ? ? ??? ? ? ??? ? ????? h fe ??? ? ? ? ? ? ? ? ? ? ??? 40 40 40 20 ???? ? ?? ? ? ?? ? ? ?? ? ???? e e e e ??? ? ? ? ? ? ? ? ? ? ??? e ?????????????????????? ? ???????????????????? ? ?????????????????????? dc current gain linearity (v ce from 2.0 v to 20 v, i c from 0.1 a to 3 a) (npn to pnp) ????? ? ??? ? ????? h fe ?????? ? ???? ? ?????? typ 2 3 ??? ? ? ? ??? ?????????????????????? ? ???????????????????? ? ?????????????????????? collectoremitter saturation voltage (i c = 1.0 adc, i b = 0.1 adc) ????? ? ??? ? ????? v ce(sat) ??? ? ? ? ??? e ???? ? ?? ? ???? 0.5 ??? ? ? ? ??? vdc ?????????????????????? ?????????????????????? baseemitter on voltage (i c = 1.0 adc, v ce = 2.0 vdc) ????? ????? v be(on) ??? ??? e ???? ???? 1.0 ??? ??? vdc ????????????????????????????????? ????????????????????????????????? dynamic characteristics ?????????????????????? ? ???????????????????? ? ?????????????????????? current gain e bandwidth product (2) (i c = 500 madc, v ce = 10 vdc, f test = 10 mhz) ????? ? ??? ? ????? f t ??? ? ? ? ??? 30 ???? ? ?? ? ???? e ??? ? ? ? ??? mhz (1) pulse test: pulse width 300 m s, duty cycle 2.0%. (2) f t = ? h fe ?? f test .
mje15028 mje15030 mje15029 mje15031 http://onsemi.com 3 t, time (ms) 0.01 0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k 0.1 0.5 0.2 1.0 0.2 0.1 0.05 r(t), transient thermal z q jc(t) = r(t) r q jc r q jc = 1.56 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) z q jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.2 single pulse resistance (normalized) figure 2. thermal response 0.5 d = 0.5 0.05 0.3 0.7 0.07 0.03 0.02 0.02 100 200 0.1 0.02 0.01 20 2.0 figure 3. forward bias safe operating area v ce , collector-emitter voltage (volts) 16 10 0.02 20 120 bonding wire limited thermally limited second breakdown limited @ t c = 25 c i c , collector current (amp) dc 100 m s 5.0 10 150 1.0 50 0.1 5ms mje15028 mje15029 mje15030 mje15031 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c v ce limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation then the curves indicate. the data of figures 3 and 4 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) < 150 c. t j(pk) may be calculated from the data in figure 2. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
mje15028 mje15030 mje15029 mje15031 http://onsemi.com 4 8.0 0 figure 4. reversebias switching safe operating area v ce , collector-emitter voltage (volts) 5.0 0 120 140 i c , collector current (amp) 5 v v be(off) = 9 v 100 110 150 3.0 130 2.0 1.0 v r , reverse voltage (volts) 10 150 500 1000 50 figure 5. capacitances 200 100 30 10 7.0 5.0 1.5 c, capacitance (pf) 3.0 20 50 figure 6. smallsignal current gain f, frequency (mhz) 1.0 3.0 10 20 100 h fe , small signal current gain 2.0 7.0 5.0 0.5 5.0 50 30 10 0.7 npn figure 7. current gainbandwidth product i c , collector current (amp) 0.5 2.0 60 100 f t , current gain-bandwidth product (mhz) 1.0 10 20 0.1 5.0 90 50 0.2 i c /i b = 10 t c = 25 c 3 v 1.5 v pnp (npn) (pnp) v ce = 10 v i c = 0.5 a t c = 25 c c ib (npn) c ob (pnp) 100 30 0 10 0 v c ib (pnp) c ob (npn)
mje15028 mje15030 mje15029 mje15031 http://onsemi.com 5 i c , collector current (amp) i c , collector current (amp) h fe , dc current gain figure 8. dc current gain figure 9. aono voltage i c , collector current (amp) 200 1k 10 0.1 150 100 70 30 0.2 10 1.0 5.0 2.0 0.5 t j = 25 c t j = 150 c 0.1 i c , collector current (amp) 1.6 1.2 1.0 0.6 0.2 t j = 25 c v, voltage (volts) npn e mje15028 mje15030 pnp e mje15029 mje15031 500 1k 200 100 50 20 10 h fe , dc current gain v ce = 2.0 v v, voltage (volts) v be(sat) @ i c /i b = 10 v ce(sat) = i c /i b = 20 v be(on) @ v ce = 2.0 v 1.8 1.4 1.0 0.8 0.4 0 i c /i b = 10 i c , collector current (amp) v cc = 80 v i c /i b = 10 t j = 25 c t d (npn, pnp) t r (pnp) figure 10. turnon times 10 i c , collector current (amp) 5.0 3.0 2.0 1.0 0.5 figure 11. turnoff times 0.2 0.1 v cc = 80 v i c /i b = 10, i b1 = i b2 t s (npn) t j = 25 c 0.1 1.0 0.5 0.2 0.03 0.01 0.1 0.05 0.02 t, time (s) m t, time (s) m npn pnp 10 0.1 0.2 1.0 5.0 2.0 0.5 10 0.2 1.0 5.0 2.0 0.5 10 0.1 0.2 1.0 5.0 2.0 0.5 10 0.2 1.0 5.0 2.0 0.5 10 0.1 0.2 0.3 5.0 2.0 0.5 50 20 500 t j = 150 c t j = -55 c v ce = 2 v t j = -55 c t j = 25 c t r (npn) t j = 25 c v be(sat) @ i c /i b = 10 v be(on) @ v ce = 2.0 v v ce(sat) = i c /i b = 20 i c /i b = 10 t f (npn) t f (pnp) t s (pnp)
mje15028 mje15030 mje15029 mje15031 http://onsemi.com 6 package dimensions case 221a09 issue aa to220ab notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j style 1: pin 1. base 2. collector 3. emitter 4. collector
mje15028 mje15030 mje15029 mje15031 http://onsemi.com 7 notes
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